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Comparison and simulation of a highly linear LNA using 45 nm CMOS process
Volume 5, Issue 1, 2023-2024, Pages 29 - 40
1 Electrical engineering, islamic Azad university, BandarAbbas branch
2 Electrical engineering, islamic Azad university, BandarAbbas branch
3 Electrical engineering, islamic Azad university, BandarAbbas branch
Abstract :
Comparison and simulation of a highly linear LNA using 45 nm CMOS process
Comparison and simulation of a highly linear LNA using 45 nm CMOS process
Keywords :
Ultra-Low-Power, Linearity improvement, LNA, Complementary metal-oxide semiconductor(CMOS), Intermodulation distortion (IMD), Linearization, RF circuit
Ultra-Low-Power, Linearity improvement, LNA, Complementary metal-oxide semiconductor(CMOS), Intermodulation distortion (IMD), Linearization, RF circuit